Memory


Micron Completes Acquisition of Inotera Memories

Micron Completes Acquisition of Inotera Memories

Micron this month completed acquisition of Inotera Memories, a DRAM production company it has co-owned for eight years controlled its output for three years. The acquisition is designed to help Micron to increase its profit margins and enable the company to better manage the transition of Inotera’s production capacity to newer fabrication technologies. In the meantime, Nanya Technology, a former co-owner of Inotera, gets $4.1 billion and options to license Micron’s two 10 nm-class DRAM manufacturing processes.

Inotera was established in early 2003 as a joint venture between Nanya and Infineon, with Nanya controlling two-thirds of the company. Under the terms of the agreement, Infineon developed process technologies in exchange for part of the Inotera output (technology-for-capacity deals were common in the DRAM industry back then), whereas Nanya licensed those technologies to produce memory in its own fab. Eventually, Infineon spun its DRAM operations off as an independent company called Qimonda in 2006, and Qimonda sold its stake in Inotera to Micron in 2008 (and then went bankrupt in 2009). Micron managed to amend the agreement with Nanya in early 2013 and got exclusive right to buy all of Inotera’s output at a market price that included a profit margin shared between the owners of the manufacturer.

Inotera’s Fab 11 manufacturing facility is located in Taoyuan, Taiwan, and reportedly accounts for 35% of Micron’s total output. As a result it is an important source of DRAM for the company. Late last year Micron and Nanya finally reached an agreement under which the former would acquire the remaining stake it did not own in Inotera for $4.1 billion, comprised of cash and equity, whereas the latter would get the money along with options to license for two generations of Micron’s DRAM process technologies following the current 20 nm (at present, the technologies are known as 1X and 1Y nm). Under the license agreements negotiated a year ago, in each case when Nanya licenses Micron’s processes, the U.S.-based DRAM maker will get an equity stake in Nanya as well as royalties based on revenues from products (subject to an agreed cap). The stakes would give Micron access to profits earned by Nanya in general. It is also important to note that the licenses will be limited to a specific facility footprint and subject to a quarterly cap on production, something that significantly lowers Nanya’s opportunities to compete against Micron in terms of volumes. Moreover, the licenses are non-transferrable and terminate if Nanya is acquired by a third party.

Now that Micron assumes full control over Inotera, it will get its output at production costs, which will be immediately beneficial to the company’s profit margins and other financial metrics. Going forward, Micron will have a full control of the fab and will thus be able to manage upgrades and align them with its other DRAM manufacturing operations in Japan and Taiwan. It is interesting to note that according to DRAMeXchange/TrendForce, Inotera transited to Micron’s 20 nm process technology quicker than Micron’s own fabs, an indicator that the production facility is a good asset with an agile management team.

In the meantime, Nanya got at least $3.1 billion in cash and access to two of Micron’s 10 nm-class fabrication technologies, which will enable it to be competitive against other DRAM makers in terms of costs, chip capacities and performance for at least four more years. It is also important that Nanya will ensure its lead over other Taiwan-based DRAM makers, Winbond and Powerchip, by using leading-edge manufacturing nodes. What happens four years down the road is hard to tell, but for some time the company will not need to collaborate with other DRAM makers to develop process technologies. At the same time, restrictions imposed by the license agreements will limit Nanya’s ability to expand its market share beyond ~3% of the global output it controls now.

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Micron Completes Acquisition of Inotera Memories

Micron Completes Acquisition of Inotera Memories

Micron this month completed acquisition of Inotera Memories, a DRAM production company it has co-owned for eight years controlled its output for three years. The acquisition is designed to help Micron to increase its profit margins and enable the company to better manage the transition of Inotera’s production capacity to newer fabrication technologies. In the meantime, Nanya Technology, a former co-owner of Inotera, gets $4.1 billion and options to license Micron’s two 10 nm-class DRAM manufacturing processes.

Inotera was established in early 2003 as a joint venture between Nanya and Infineon, with Nanya controlling two-thirds of the company. Under the terms of the agreement, Infineon developed process technologies in exchange for part of the Inotera output (technology-for-capacity deals were common in the DRAM industry back then), whereas Nanya licensed those technologies to produce memory in its own fab. Eventually, Infineon spun its DRAM operations off as an independent company called Qimonda in 2006, and Qimonda sold its stake in Inotera to Micron in 2008 (and then went bankrupt in 2009). Micron managed to amend the agreement with Nanya in early 2013 and got exclusive right to buy all of Inotera’s output at a market price that included a profit margin shared between the owners of the manufacturer.

Inotera’s Fab 11 manufacturing facility is located in Taoyuan, Taiwan, and reportedly accounts for 35% of Micron’s total output. As a result it is an important source of DRAM for the company. Late last year Micron and Nanya finally reached an agreement under which the former would acquire the remaining stake it did not own in Inotera for $4.1 billion, comprised of cash and equity, whereas the latter would get the money along with options to license for two generations of Micron’s DRAM process technologies following the current 20 nm (at present, the technologies are known as 1X and 1Y nm). Under the license agreements negotiated a year ago, in each case when Nanya licenses Micron’s processes, the U.S.-based DRAM maker will get an equity stake in Nanya as well as royalties based on revenues from products (subject to an agreed cap). The stakes would give Micron access to profits earned by Nanya in general. It is also important to note that the licenses will be limited to a specific facility footprint and subject to a quarterly cap on production, something that significantly lowers Nanya’s opportunities to compete against Micron in terms of volumes. Moreover, the licenses are non-transferrable and terminate if Nanya is acquired by a third party.

Now that Micron assumes full control over Inotera, it will get its output at production costs, which will be immediately beneficial to the company’s profit margins and other financial metrics. Going forward, Micron will have a full control of the fab and will thus be able to manage upgrades and align them with its other DRAM manufacturing operations in Japan and Taiwan. It is interesting to note that according to DRAMeXchange/TrendForce, Inotera transited to Micron’s 20 nm process technology quicker than Micron’s own fabs, an indicator that the production facility is a good asset with an agile management team.

In the meantime, Nanya got at least $3.1 billion in cash and access to two of Micron’s 10 nm-class fabrication technologies, which will enable it to be competitive against other DRAM makers in terms of costs, chip capacities and performance for at least four more years. It is also important that Nanya will ensure its lead over other Taiwan-based DRAM makers, Winbond and Powerchip, by using leading-edge manufacturing nodes. What happens four years down the road is hard to tell, but for some time the company will not need to collaborate with other DRAM makers to develop process technologies. At the same time, restrictions imposed by the license agreements will limit Nanya’s ability to expand its market share beyond ~3% of the global output it controls now.

Related Reading:

Transcend Introduces Extreme Temperature DDR4 SO-DIMMs

Transcend Introduces Extreme Temperature DDR4 SO-DIMMs

Transcend last week introduced a family of DDR4 SO-DIMMs that can operate in extreme temperature conditions. The modules are designed for industrial computers, special-purpose PCs, POS, ATM and other systems that work in rough environments for 24/7. Subsequently, the SO-DIMMs can be used safely in SFF PCs without decent cooling for prolonged amounts of time.

Transcend’s new industrial grade memory modules use special PCBs that have industrial-grade capacitors, 30μm gold-plated contacts and are designed to withstand shock, electromagnetic disturbance and extreme temperatures from –40°C to +85°C. In theory, it means that the SO-DIMMs are rated to operate in Antarctica or in the Lut Desert in Iran. In the real world, Transcend’s new SO-DIMMs will be used inside space-constrained industrial PCs, military systems, embedded systems and others that work 24/7 in rough conditions and/or without decent cooling.

Specifications of Transcend’s Industrial DDR4 SO-DIMMs
Module Capacity Speed Voltage ECC Part Number
8 GB (ECC) DDR4-2400 1.2 V Yes TS1GSH72V4B-I
8 GB No TS1GSH64V4B-I
16 GB TS2GSH64V4B-I

The new industrial-grade modules from Transcend are based on Samsung’s 8 Gb B-die DDR4 chips (marked as K4A8G08) that were hand-picked and tested to run in extreme conditions. The SO-DIMMs come in 8 GB and 16 GB configurations and are rated to operate at 2400 MT/s at 1.2V, which means that they are fully compatible with the industrial-grade, embedded and low-power CPUs that support DDR4 at JEDEC speeds. The new modules carry Transcend’s lifetime warranty.

Pricing of Transcend’s new industrial-grade DDR4 modules is unknown as for industrial customers it typically depends on actual sales volumes. We would expect the modules will be more expensive than typical SO-DIMMs because they use special PCBs with 30μin gold plating, components with extended temperature ranges as well as cherry-picked memory ICs.

Related Reading:

Transcend Introduces Extreme Temperature DDR4 SO-DIMMs

Transcend Introduces Extreme Temperature DDR4 SO-DIMMs

Transcend last week introduced a family of DDR4 SO-DIMMs that can operate in extreme temperature conditions. The modules are designed for industrial computers, special-purpose PCs, POS, ATM and other systems that work in rough environments for 24/7. Subsequently, the SO-DIMMs can be used safely in SFF PCs without decent cooling for prolonged amounts of time.

Transcend’s new industrial grade memory modules use special PCBs that have industrial-grade capacitors, 30μm gold-plated contacts and are designed to withstand shock, electromagnetic disturbance and extreme temperatures from –40°C to +85°C. In theory, it means that the SO-DIMMs are rated to operate in Antarctica or in the Lut Desert in Iran. In the real world, Transcend’s new SO-DIMMs will be used inside space-constrained industrial PCs, military systems, embedded systems and others that work 24/7 in rough conditions and/or without decent cooling.

Specifications of Transcend’s Industrial DDR4 SO-DIMMs
Module Capacity Speed Voltage ECC Part Number
8 GB (ECC) DDR4-2400 1.2 V Yes TS1GSH72V4B-I
8 GB No TS1GSH64V4B-I
16 GB TS2GSH64V4B-I

The new industrial-grade modules from Transcend are based on Samsung’s 8 Gb B-die DDR4 chips (marked as K4A8G08) that were hand-picked and tested to run in extreme conditions. The SO-DIMMs come in 8 GB and 16 GB configurations and are rated to operate at 2400 MT/s at 1.2V, which means that they are fully compatible with the industrial-grade, embedded and low-power CPUs that support DDR4 at JEDEC speeds. The new modules carry Transcend’s lifetime warranty.

Pricing of Transcend’s new industrial-grade DDR4 modules is unknown as for industrial customers it typically depends on actual sales volumes. We would expect the modules will be more expensive than typical SO-DIMMs because they use special PCBs with 30μin gold plating, components with extended temperature ranges as well as cherry-picked memory ICs.

Related Reading:

Samsung Introduces 8 GB LPDDR4-4266 Package for Mobile Devices

Samsung Introduces 8 GB LPDDR4-4266 Package for Mobile Devices

Samsung this week announced its first LPDDR4 memory chips made using its 10nm-class DRAM fabrication technology. The new DRAM ICs feature the industry’s highest density of 16 Gb, are rated to run at 4266 MT/s data rate, and open the door to more mobile devices with 8 GB of DRAM.

Earlier this year Samsung started to produce DDR4 memory using its 10nm-class DRAM manufacturing process (which is believed to be 18 nm) and recently the firm began to use it to make LPDDR4 memory devices, just as it planned. The thinner fabrication technology allowed Samsung to increase capacity of a single LPDDR4 DRAM IC to 16 Gb (up from 12 Gb at 20nm introduced in August, 2015) while retaining a 4266 MT/s transfer rate.

The first product to use the 16 Gb ICs is Samsung’s 8 GB LPDDR4-4266 mobile DRAM package for smartphones, tablets, and other applications that can use LPDDR4. The device stacks four memory ICs and provides up to 34 GB/s of bandwidth when connected to an SoC using a 64-bit memory bus. The 8 GB DRAM package comes in a standard 15 mm x 15 mm x 1 mm form-factor, which is compatible with typical mobile devices, but Samsung can also make the package thinner than 1 mm to enable PoP stacking with a mobile application processor or a UFS NAND storage device.

Samsung’s 8 GB LPDDR4 DRAM Package
  SEC 634
K3RG8G8
DRAM IC Capacity 16 Gb
Number of DRAM ICs 4
Data Rate 4266 MT/s
Bus Width x64
Bandwidth 34 GB/s
Package 15 mm x 15 mm x 1 mm
Process Technology 10nm-class (18nm?)

Samsung has not revealed a lot about the cost efficiency or power consumption of the 16 Gb LPDDR4 ICs, nor have they discussed those details for the 8 GB LPDDR4 package either. What little Samsung has said is that the latter consumes approximately the same amount of power as a 4 GB LPDDR4-3200 device (four 8 Gb ICs) made using its 20 nm-class process technology. Taken at face value, one can extrapolate that the switch to the 10nm-class fabrication process allowed Samsung to double the capacity and increase performance by 33% at the same power. Unfortunately, we do not know anything about the geometry scaling of the new ICs relative to Samsung’s older ICs, so it’s hard to even guess how much Samsung’s newest DDR4 costs to fab.

Samsung has not officially commented on when it plans to start commercial shipments of its 8 GB LPDDR4 packages, but it is reasonable to assume that the company will commence sales of such devices in the coming months, with actual products hitting the market in 2017.